| 摘要 |
A substrate is etched in a process zone by placing the substrate in the process zone, providing an energized process gas in the process zone, and exhausting the process gas. A first stage of the etching process is monitored to determine completion of the first stage by detecting the intensities of one or more wavelengths of a radiation emission generated by the energized gas, generating a first signal in relation to the detected intensities, and evaluating the first signal. A second stage of the etching process is monitored to determine completion of the second stage by detecting the intensities of one or more wavelengths of a polarized radiation reflected from the substrate being etched, generating a second signal in relation to the detected intensities, and evaluating the second signal.
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