Method and apparatus for forming an interlayer insulating film, and semiconductor device

摘要

Disclosed is a method for forming an interlayer insulating film which comprises the steps of forming an underlying insulating film on a substrate; forming a porous SiO2 film on the underlying insulating film by chemical vapor deposition method using Si2H6 and an oxidative gas as a reaction gas; subjecting the porous SiO2 film to H (hydrogen) plasma treatment; forming a plasma SiO2 film and a fluidic SiO2 film formed by TEOS+O3 on the porous SiO2 film; then smoothing a surface of the SiO2 film by etching; and forming a cover insulating film on the smoothed surface.