发明名称 |
Control of removal rates in CMP |
摘要 |
A two-step method for chemical mechanical polishing of a semiconductor substrate having successive layers, comprised of, a metal layer, an underlying barrier film and an underlying dielectric layer. The first polishing step is performed utilizing a slurry composition selective to the metal in the metal layer, to remove the metal at a high removal rate during polishing, and the second polishing step is performed utilizing a slurry composition selective to the barrier film and least selective to the metal layer and the underlying dielectric layer. In an alternate embodiment, the second polishing step is performed with a slurry equally selective to the barrier layer and the underlying dielectric layer and least selective to the metal of the metal layer, to remove the barrier layer at a high removal rate during polishing, and level a surface of the dielectric layer to the surface of the metal interconnection structure in the underlying dielectric layer.
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申请公布号 |
US2002019202(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
US20010795241 |
申请日期 |
2001.02.28 |
申请人 |
THOMAS TERENCE M.;YE QIANQIU (CHRISTINE);SO JOSEPH K.;BURKE PETER A.;SACHAN VIKAS;LANGLOIS ELIZABETH A.;PIERCE KEITH G.;LACK CRAIG D.;GETTMAN DAVID;SENOO HIROYUKI;YOSHIDA KOUCHI;NISHIDA YOSHIKAZU;KOINKAR VILAS N.;LAVOIE RAYMOND LEE |
发明人 |
THOMAS TERENCE M.;YE QIANQIU (CHRISTINE);SO JOSEPH K.;BURKE PETER A.;SACHAN VIKAS;LANGLOIS ELIZABETH A.;PIERCE KEITH G.;LACK CRAIG D.;GETTMAN DAVID;SENOO HIROYUKI;YOSHIDA KOUCHI;NISHIDA YOSHIKAZU;KOINKAR VILAS N.;LAVOIE RAYMOND LEE |
分类号 |
C09G1/02;H01L21/3105;H01L21/321;(IPC1-7):B24B7/22 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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