| 摘要 |
PURPOSE: An electrostatic discharge(ESD) protection circuit is provided to prevent electric charges gathering toward an edge of a junction in case of employing a self-aligned silicide layer for the junction. CONSTITUTION: In the ESD protection circuit, a gate electrode(23) is formed in one direction on an active region(21) of a semiconductor substrate. Source/drain impurity regions(24) are formed in the active region(21) from both sides of the gate electrode(23). The self-aligned silicide layer is formed on surfaces of the source/drain regions(24). A plurality of contact areas(25) are formed at regular intervals in the source/drain regions(24). In particular, the ESD protection circuit includes gate electrode extending portions(23a), each of which is extended from the gate electrode(23) to a vicinity of the contact area(25) and thereby isolates the junctions from each other so as to prevent electric charges gathering toward edges of the junction.
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