| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where resistance of an electrode and the like are low, an electronic circuit can be micronized, and an electrode and the like which are formed at a low temperature are provided. SOLUTION: An oxide film 4 is formed on the surface of a silicon substrate 3, over which an electrode 1 and a wiring 2 are provided which are laminated bodies provided with a lower layer comprising a polycrystal silicon layer 5 and an upper layer comprising a layer 6 of a compound or mixture of metal and germanium, or, a compound or mixture of metal and germanium-silicon compound. The reaction start temperature between the metal and germanium or between the metal and germanium-silicon compound is 450-500 deg.C. The metal is selected out of W, Ti, Zr, Ta, Mo, Nb, Hf, V, Cu, Co, Cr, Ni, Mn, Pt, Rh, Ir, Pd and the like while the composition ratio between the metal and germanium or between the metal and germanium-silicon compound is 1:1 to 1:3 in mol ratio.
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