发明名称 ETCHING SOLUTION AND ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an etching solution and an etching method, in etching using an etching solution containing cerium (TV) nitrate ammonium capable of surely preventing the precipitation of insoluble compounds, further good in the etching rate and excellent in mass-productivity. SOLUTION: In this etching solution, the concentration of nitric acid is 8 to 15 wt.%, and the concentration of cerium (TV) nitrate ammonium is >20 to 30 wt.%. The etching method uses the same etching solution. In the etching method, cerium (TV) nitrate ammonium is replenished into the etching solution in the process of etching in such a manner that the weight ratio of quadrivalent cerium to hexavalent chromium is controlled to >=17.
申请公布号 JP2002030469(A) 申请公布日期 2002.01.31
申请号 JP20000213068 申请日期 2000.07.13
申请人 HITACHI LTD;MITSUBISHI CHEMICALS CORP 发明人 IKEDA HAJIME;TAKAHASHI TOMOAKI;ISHIKAWA MAKOTO;MIYOSHI MASARU
分类号 C23F1/26;H01L21/306;(IPC1-7):C23F1/26 主分类号 C23F1/26
代理机构 代理人
主权项
地址