| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce a power consumption during a refresh operation of a memory. CONSTITUTION: A control part(310) controls a refresh operation by generating a refresh signal(ref_cmd) in response to an auto refresh signal(a_ref) and self refresh signal(s_ref). A bank counter(330) generates a bank selection signal(b_sel) and a bank count signal(b_cnt) controlling the selection of a bank in response to the refresh signal. A bank selection part(350) generates the first and the second bank enable signal(b_en <0>,b_en<1>) enabling the whole bank selectively in response to the bank selection signal and the bank count signal. A refresh counter control part(370) generates a counter active signal(cnt_ac) in response to the bank selection signal and the refresh signal. And a refresh counter(390) generates a row address signal(r_ad£0:N|) designating an address to access a memory cell in response to the counter active signal.
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