| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma etching apparatus which can surely accelerate electrons. SOLUTION: This plasma etching apparatus treats an object to be treated by generating a plasma in a chamber and, at the same time, applying a pulse voltage having a prescribed cycle period upon an electrode on which the object is placed. The pulse width and the trailing time from a prescribed positive value to a prescribed negative value of the pulse voltage applied upon the electrode are set so that the rise time of the voltage from the prescribed negative value to the prescribed positive value may become >0 ns and <5 ns, and the flowing time of the electrons to the electrode may become >0 and >=1/5 of the cycle period.</p> |
