| 发明名称 |
THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS |
| 摘要 |
<p>The method of fabrication of highly resistive GaN bulk crystals by crystallization from the solution of atomic nitrogen in the molten mixture of metals, containing gallium in the concentration not lower than 90 at. % and the Periodic Table group II metals: calcium, beryllium or in the concentration of 0.01-10 at. %, at the temperature 1300-1700° C., under the nitrogen pressure 0.5-2.0 GPa and in the presence of temperature gradient characterized by the temperature gradient not higher than 10° C./cm.</p> |
| 申请公布号 |
EP0986655(B1) |
申请公布日期 |
2001.12.19 |
| 申请号 |
EP19980923236 |
申请日期 |
1998.06.03 |
| 申请人 |
CENTRUM BADAN WYSOKOCISNIENIOWYCH POLSKIEJ AKADEMII NAUK |
发明人 |
LUCZNIK, BOLESLAW;SUSKI, TADEUSZ;WROBLEWSKI, MIROSLAW;POROWSKI, SYLWESTER;BOCKOWSKI, MICHAL;GRZEGORY, IZABELLA;KRUKOWSKI, STANISLAW;LESZCZYNSKI, MICHAL |
| 分类号 |
C30B29/38;C30B9/00;C30B11/00;(IPC1-7):C30B9/00;C30B29/40 |
主分类号 |
C30B29/38 |
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