| 摘要 |
PROBLEM TO BE SOLVED: To replace a protective circuit against ESD with a more accurate equivalent circuit and also to analyze the entire resistance to ESD of a protective circuit against ESD quickly and accurately, concerning a simulation method for a protective circuit against electrostatic breakdown. SOLUTION: A protective circuit against electrostatic breakdown composed of an insulated gate field effect transistor is replaced with an equivalent circuit using a bipolar transistor, a current flowing at least from a collector to a substrate between a current flowing from the collector to the substrate and a current flowing from an emitter to a substrate is expressed by two current sources, and the protective resistance to electrostatic breakdown is simulated by circuit simulation.
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