| 摘要 |
<p>A method is provided, the method including forming a gate dielectric layer (110, 410) above a substrate layer (105) and forming a gate conductor layer (115, 415) above the gate dielectric layer (110, 410). The method also comprises forming an inorganic bottom anti-reflective coating layer (120) above the gate conductor layer (115, 415) and treating the inorganic bottom anti-reflective coating layer (120) with an oxidizing treatment (130) during a rapid thermal anneal process.</p> |
