发明名称 |
COATING DEVELOPING SYSTEM AND METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a coating developing system having a function capable of removing impurities of a molecular level such as oxygen or the like adhering to a wafer. SOLUTION: A passing part 5 is provided between an interface 4 and an exposure unit 6 of the coating developing system 1. The passing part 5 has a first path 60 where a wafer W passes when it is carried from the interface 4 to the exposure unit 6, and a second path 61 where the wafer W passes when it is carried from the exposure unit 6 to the interface 4. The first path 60 is provided with a pressure reducing removing unit 65 for reducing the pressure in a chamber and removing impurities in the chamber. The wafer W before exposure processing is carried into a pressure reducing removing unit 65 where impurities adhering to the wafer W are removed, and also solvent in a resist liquid on the wafer W can be evaporated at the same time. |
申请公布号 |
JP2001319856(A) |
申请公布日期 |
2001.11.16 |
申请号 |
JP20000135988 |
申请日期 |
2000.05.09 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
MATSUYAMA YUJI;KITANO JUNICHI;KITANO TAKAHIRO |
分类号 |
G03F7/16;G03F7/30;G03F7/38;H01L21/027 |
主分类号 |
G03F7/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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