发明名称 |
SiGe FILM FORMING METHOD, METHOD OF MANUFACTURING HETEROJUNCTION TRANSISTOR AND HETEROJUNCTION BIPOLAR TRANSISTOR |
摘要 |
PROBLEM TO BE SOLVED: To prevent an SiGe film on an insulating film from becoming rough and to improve film quality and film resistance in an SiGe film forming method, a manufacturing method of a heterojunction transistor and a heterojunction bipolar transistor. SOLUTION: A method for forming a SiGe film 8 on the insulating film 6 is provided with a buffer forming process for forming a first Si(1-x)Gex film 9 (0<=x<0.05) on the insulating film and a main film forming process for forming a second Si(1-y)Gey film 10 (0.05<=y<1) on the first Si(1-x)Gex film. The buffer forming process forms the first Si(1-x)Gex in the thickness range of 0.5 nm to 5 nm.
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申请公布号 |
JP2001319935(A) |
申请公布日期 |
2001.11.16 |
申请号 |
JP20000138994 |
申请日期 |
2000.05.11 |
申请人 |
MITSUBISHI MATERIALS SILICON CORP;MITSUBISHI MATERIALS CORP |
发明人 |
SHIONO ICHIRO;MIZUSHIMA KAZUKI |
分类号 |
H01L21/28;H01L21/205;H01L21/3205;H01L21/331;H01L23/52;H01L29/165;H01L29/73;H01L29/737;(IPC1-7):H01L21/331;H01L21/320 |
主分类号 |
H01L21/28 |
代理机构 |
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