发明名称 METHOD AND SYSTEM OF MEASURING WAVINESS IN SILICON WAFERS
摘要 <p>A method and system of measuring waviness of a silicon wafer. A memory stores data representative of the shape of the wafer at a plurality of positions on the wafer and a processor processes the data to determine a waviness parameter. The processor defines an inspection surface as a function of the data and calculates deviations between the inspection surface and a first reference plane at a plurality of positions on the inspection surface. The processor further defines a plurality of localized sites on the wafer and calculates deviations between the inspection surface and a second reference plane at a plurality of positions on the inspection surface for each site. The second reference plane is a function of the calculated deviations between the inspection surface for each site and the first reference plane. The processor then defines a waviness parameter for each site as a maximum variance of the calculated deviations between the inspection surface and the second reference plane.</p>
申请公布号 WO0052420(A9) 申请公布日期 2001.10.25
申请号 WO2000US03078 申请日期 2000.02.07
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 WITTE, DALE, A.
分类号 H01L21/66;(IPC1-7):G01B21/30 主分类号 H01L21/66
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