| 摘要 |
<p>An in-situ method for synthesis of a vapor type of copper or other metal precursor from a solid source of metal or metal halide. The solid source is localized above the wafer (22) and its temperature is controlled independently from the wafer temperature. The solid source may be located, for example, in a showerhead (50). A metal precursor vapor is produced, and this vapor is drawn onto the wafer (22), allowing deposition to occur on the wafer (22) and a solid thin metal film (60) to form on the surface (28) of wafer (22). The invention overcomes the problem of low partial pressure of copper precursors in copper CVD.</p> |
