| 摘要 |
PROBLEM TO BE SOLVED: To provide a charge-pump circuit having high efficiency and a large output current. SOLUTION: Two front-stag MOS transistor M1, M2 for charge transmission are configured in a N-channel pattern, and two rear-stage MOS transistor M3, M4 for charge transmission in a P-channel pattern. Also, there are mounted inverting level-shift circuits S1, S2 enabling the output of an intermediate potential and non-inverting level-shift circuits S3, S4. By way of these configurations, the charge-pump circuit having high efficiency and a large output current is materialized as well as an inter-gate/source voltage Vgs (transistors in ON-state) of the transistors M1 to M4 for charge transmission is evened to 2Vdd.
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