发明名称 Method and apparatus for determining optimum exposure threshold for a given photolithographic model
摘要 A system and method for enhancing process latitude (tolerances) in the fabrication of devices and integrated circuits. A measuring point is selected corresponding to a feature of critical dimension. Then the pattern is convolved with the model, and its value and rate of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold having the largest rate of change, or contrast, is selected. Finally, proximity correction is performed using relevant parameters.
申请公布号 US2001029403(A1) 申请公布日期 2001.10.11
申请号 US20010768109 申请日期 2001.01.23
申请人 MICRON TECHNOLOGY, INC. 发明人 PIERRAT CHRISTOPHE;BURDORF JAMES
分类号 C09K8/42;C09K8/508;C09K8/80;G03F7/20;H01L21/66;(IPC1-7):G06F19/00 主分类号 C09K8/42
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