发明名称 |
Solid state imaging device having a photodiode and a mosfet and method of manufacturing the same |
摘要 |
A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.
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申请公布号 |
US2001025970(A1) |
申请公布日期 |
2001.10.04 |
申请号 |
US20010801919 |
申请日期 |
2001.03.09 |
申请人 |
NOZAKI HIDETOSHI;INOUE IKUKO;YAMASHITA HIROFUMI |
发明人 |
NOZAKI HIDETOSHI;INOUE IKUKO;YAMASHITA HIROFUMI |
分类号 |
H01L21/28;H01L21/8238;H01L27/092;H01L27/146;H01L29/41;H01L29/417;H04N5/335;H04N5/357;H04N5/369;H04N5/374;(IPC1-7):H01L27/148;H01L27/01;H01L27/12;H01L31/039 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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