METHOD OF PRODUCING HIGHLY PURE METAL SILICON AND PRODUCTION DEVICE THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a method of producing a highly pure metal silicon, by which boron and carbon of impurities can efficiently be removed from metal silicon in a short time, and to provide a device for producing the highly pure metal silicon, which is used for the production method and has a simple structure. SOLUTION: This method of producing the highly pure metal silicon, characterized by adding steam (H2O) to melted metal silicon in a crucible 20 from a plasma touch 10, when the metal silicon is melted with plasma, thus oxidizing boron and carbon contained in the metal silicon to produce boron oxide (BO) gas and carbon monoxide (CO) gas, simultaneously taking the boron oxide gas and the carbon monoxide gas into the bubbles of hydrogen (H2) gas produced by the decomposition of ammonia (NH3) gas added through the touch 10, and removing the taken boron oxide gas and the taken carbon monoxide from the melted metal silicon.