| 摘要 |
<p>A method for manufacturing a flash memory in which a high-density plasma is produced from a mixture gas of Kr and an oxidizing gas or a nitride gas by microwave excitation and the surface of a polysilicon electrode is nitrided or oxidized by oxygen radical O* or hydrogen nitride radical NH* in the plasma. A method for forming an oxide film and nitride film on a polysilicon film by such a plasma processing.</p> |
