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发明名称
VERFAHREN ZUR HERSTELLUNG EINER DRAM- SPEICHERZELLE MIT VERTIKALEM TRANSISTOR
摘要
申请公布号
AT205019(T)
申请公布日期
2001.09.15
申请号
AT19960107433T
申请日期
1996.05.10
申请人
INFINEON TECHNOLOGIES AG
发明人
ROESNER, WOLFGANG, DR.;RISCH, LOTHAR, DR.;HOFMANN, FRANZ, DR.;KRAUTSCHNEIDER, WOLFGANG, DR.
分类号
H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L21/824
主分类号
H01L21/8242
代理机构
代理人
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