发明名称 |
Sequential in-situ heating and deposition of halogen-doped silicon oxide |
摘要 |
A low dielectric constant insulating film on a substrate is formed by introducing a process gas comprising a silicon source, a fluorine source, and oxygen into a chamber. The process gas is formed into a plasma to deposit at least a first portion of the insulating film over the substrate. The wafer and the first portion of the insulating film are then heated to a temperature of about 100-500° C. for a period of time. The film may include several separate portions, the deposition of each of which is followed by a heating step. The film has a low dielectric constant and good gap-fill and stability due to the lack of free fluorine in the film.
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申请公布号 |
US2001020447(A1) |
申请公布日期 |
2001.09.13 |
申请号 |
US20010819255 |
申请日期 |
2001.03.27 |
申请人 |
MURUGESH LAXMAN;ORCZYK MACIEK;NARAWANKAR PRAVIN;QIAO JIANMIN;SAHIN TURGUT |
发明人 |
MURUGESH LAXMAN;ORCZYK MACIEK;NARAWANKAR PRAVIN;QIAO JIANMIN;SAHIN TURGUT |
分类号 |
C23C16/40;C23C16/44;C23C16/455;C23C16/56;H01L21/316;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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