发明名称 |
Low temperature reflow method for filling high aspect ratio contacts |
摘要 |
Impurities are added to a conductor layer in a semiconductor process to prevent formation of void spaces and encourage complete filling of contacts. The impurities reduce the melting point and surface tension of a conductor layer, thereby improving filling characteristics during a reflow step. The impurities may be added at any time during the process, including during conductor deposition and/or reflow.
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申请公布号 |
US6281104(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US19980059663 |
申请日期 |
1998.04.13 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BATRA SHUBNEESH;SANDHU GURTEJ |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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