发明名称 HIGH-Q INDUCTIVE ELEMENTS
摘要 A first insulator is formed on a base layer. A first conductor is formed on the first insulator. The first conductor is patterned. A second insulator is formed over the first insulator. A via hole is formed in the second insulator and is electrically coupled to the first conductor through the via hole. A second conductor is formed on the second insulator, and is electrically coupled to the first conductor by the via hole. The second conductor is patterned. A cavity is formed under the second conductor, and in the first and second insulators.
申请公布号 US2001016409(A1) 申请公布日期 2001.08.23
申请号 US19990467991 申请日期 1999.12.20
申请人 FARRAR PAUL A.;FORBES LEONARD 发明人 FARRAR PAUL A.;FORBES LEONARD
分类号 H01F41/04;H01L21/02;H01L27/08;(IPC1-7):H01L21/00;H01L21/476 主分类号 H01F41/04
代理机构 代理人
主权项
地址