发明名称 |
HIGH-Q INDUCTIVE ELEMENTS |
摘要 |
A first insulator is formed on a base layer. A first conductor is formed on the first insulator. The first conductor is patterned. A second insulator is formed over the first insulator. A via hole is formed in the second insulator and is electrically coupled to the first conductor through the via hole. A second conductor is formed on the second insulator, and is electrically coupled to the first conductor by the via hole. The second conductor is patterned. A cavity is formed under the second conductor, and in the first and second insulators.
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申请公布号 |
US2001016409(A1) |
申请公布日期 |
2001.08.23 |
申请号 |
US19990467991 |
申请日期 |
1999.12.20 |
申请人 |
FARRAR PAUL A.;FORBES LEONARD |
发明人 |
FARRAR PAUL A.;FORBES LEONARD |
分类号 |
H01F41/04;H01L21/02;H01L27/08;(IPC1-7):H01L21/00;H01L21/476 |
主分类号 |
H01F41/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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