发明名称 |
WET ETCHING METHOD OF SEMICONDUCTOR SILICON WAFER USING ELECTROLYZED WATER |
摘要 |
PURPOSE: A wet etching method of a semiconductor silicon wafer using electrolyzed water is provided to remove metal residues and organic residues from a surface of a silicon wafer by using anode water and cathode water of electrolyzed water. CONSTITUTION: A method for manufacturing cleaning water is to add chemicals as an electrolyte in an electrolyzed water manufacturing system and manufacture cleaning water by using an electrolysis method. The chemicals used as the electrolyte are HCl, NH4OH, and NH4Cl. The remaining residues are removed from a surface of a silicon since the cleaning water has pH of a wide range and controls ORP(Oxidation Reduction Potential).
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申请公布号 |
KR20010070621(A) |
申请公布日期 |
2001.07.27 |
申请号 |
KR20010029390 |
申请日期 |
2001.05.28 |
申请人 |
RYOO, KUN KUL |
发明人 |
KANG, BYEONG DU;RYOO, KUN KUL |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
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