| 摘要 |
PURPOSE: A method for manufacturing a bit line of a semiconductor device is provided to improve misalignment and contact resistance while guaranteeing a process margin and reducing manufacturing cost. CONSTITUTION: A semiconductor substrate(10) is prepared which has an interlayer dielectric on which a bit line landing plug(15) and a charge storage electrode landing plug(16) are formed. A portion of the charge storage electrode landing plug and the interlayer dielectric is eliminated to form a trench. A spin-on-glass(SOG) layer(18) is applied on the entire surface having the trench, and a heat treatment process is performed. The SOG layer is entirely dry-etched to expose the bit line landing plug. A bit line in contact with the bit line landing plug is formed.
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