发明名称 METHOD FOR GENERATING AUTO COLUMN ADDRESS OF SDRAM
摘要 PURPOSE: A method for generating an auto column address of an SDRAM is provided to simplify the interface between a chip set and a memory by selecting a column address using a row address signal without generating a column address selecting signal when a data access of a memory cell is performed. CONSTITUTION: In the method, a row address signal outputted from a row address generator enabled in response to a /CS(Chip Selection) and a /RAS(Row Address Strobe) inputted by a column address generating circuit. The inputted row address signal is used as a column address signal of the same address as the inputted row address signal. The row address generator is enabled in response to a DQM signal when the row address signal is used as the column address signal of the same address as the row address signal.
申请公布号 KR20010064322(A) 申请公布日期 2001.07.09
申请号 KR19990064490 申请日期 1999.12.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHAE, JONG SEOK;HONG, JEONG IL;LEE, DONG RIM;PARK, GYEONG BAE
分类号 G11C11/413;(IPC1-7):G11C11/413 主分类号 G11C11/413
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