| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which resolves a problem that a side wall of a lower part of an STI roughens due to lithography, plasma CVD, etc., during formation of an STI and a clearance is generated, silicon enters the clearance when a silicon layer is formed thereafter in the clearance, and the device does not function as a semiconductor. SOLUTION: In this manufacturing method, a second silicon oxide film 5 and a forth silicon oxide film 7 cover a side wall region and an upper region of a third silicon oxide film 6 completely even if a clearance is generated due to roughening of a side wall in a periphery of the third silicon oxide film 6, and amorphous silicon does not enter the clearance.
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