METHOD FOR FORMING DIFFUSION STOP LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming diffusion stop layer of semiconductor device is provided to increase the electric characteristics and reliability of a semiconductor device by forming an amorphous diffusion stop layer of three primary system. CONSTITUTION: A process forms a titanium nitride containing a lot of titanium on a silicon board(21). The process performs a thermal process at a gas atmosphere containing a silicon radical to form a titanume silicide(23) by using a solid matrix between the titanium in the titanium nitride(24) and the silicon board(21). The process forms the titanium silicide(23) during the thermal process and at the same time forms a titanium silicon nitride(24) containing the silicon radical.