| 摘要 |
PURPOSE: A fabrication method of a thin film transistor is provided to permit formation of self-aligned gate electrode and offset region by using source and drain electrodes as a mask and thereby to reduce the number of masks used. CONSTITUTION: In the method, after a metal layer(22) is formed on a substrate(20), a doped amorphous silicon layer(24) is formed thereon and then patterned to define contact regions(26,28) for the source and drain electrodes. Next, another amorphous silicon layer is formed over a resultant structure, patterned, and annealed to form an active layer(30') connecting the contact regions(26,28). An insulating layer(32) is then formed over a resultant structure, and a photoresist pattern is formed thereon to open a portion between the contact regions(26,28) above the active layer(30'). Next, a metal layer is deposited over a resultant structure, and then the photoresist pattern is removed. Therefore, the self-aligned gate electrode(36') is obtained on the portion defined by the photoresist pattern.
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