| 发明名称 |
Dielectric adhesion enhancement in damascene process for semiconductors |
| 摘要 |
A method for manufacturing an integrated circuit using damascene processes is provided in which dielectric surfaces subject to chemical-mechanical polishing are roughened after polishing to increase the surface area to provide more surface for chemical and mechanical bonding of subsequent layers.
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| 申请公布号 |
US6251772(B1) |
申请公布日期 |
2001.06.26 |
| 申请号 |
US19990301887 |
申请日期 |
1999.04.29 |
| 申请人 |
ADVANCED MICRO DEVICEES, INC. |
发明人 |
BROWN DIRK |
| 分类号 |
H01L21/3105;H01L21/311;H01L21/316;H01L21/318;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3105 |
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