| 摘要 |
PURPOSE: A method for forming a self-aligned contact of a semiconductor device, adaptable to an etching apparatus of a split power system, is provided. CONSTITUTION: In the method, a gate pattern(2) covered with a nitride layer(3) is formed on a semiconductor substrate(1), and then an oxide layer(4) is formed thereon. Next, the oxide layer(4) is covered with a photoresist pattern and selectively etched by using the etching apparatus of a split power system. Here the etching apparatus employs a mixed gas of C4F8, Ar, CO and CF4 as an etching gas for the oxide layer(4). In addition, C4F8 gas may have a flow rate of 5 - 100 sccm, CO gas may have a flow rate of 50 - 1000 sccm, and CF4 gas may have a flow rate of 5 - 100 sccm. Thereafter, the self-aligned contact is formed of conductive material through the etched oxide layer(4).
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