| 摘要 |
PURPOSE: Provided is a lamination type semiconductor ceramic element capable of providing an excellent ohmic contact between a semiconductor ceramic layer and an internal electrode, having a small size and a low resistance, a sufficient resistance change width, capable of actualizing a high breakdown strength, having positive temperature characteristics of resistance. CONSTITUTION: The barium titanate-based semiconductor ceramic powder having average particle diameter of 1.0 micro meter or less, a ratio of axis c/a of 1.0050 or more, ratio of Ba site/Ti site of 0.990 or more and 1.010 or less and forming solid solution of donor element such as La is used as barium titanate-based semiconductor ceramic powder which uses a nickel-based metal in internal electrodes(2) and is baked to form a semiconductor ceramic layer(3).
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