| 摘要 |
PURPOSE: A semiconductor device manufacturing method is to minimize an etching damage caused by a salicide mask layer and to suppress increase of current leakage and improve operating properties and reliability of elements. CONSTITUTION: An isolation layer(22) is formed on an isolation region of a semiconductor substrate(21) having a transistor forming regions of a salicide structure and a non-salicide structure by a shallow trench isolation process. An oxide film and a polysilicon layer are formed on the active region and selectively etched to form a gate oxide film(23) and a gate electrode(24). A gate side wall(25) is formed at a side of the gate electrode whereas a source/drain region(26) is formed at both active regions of the gate electrode. A salicide mask layer(27) is formed on the transistor forming region of non-salicide structure. A salicide layer(28) is formed on the transistor forming region of salicide structure. An oxide layer for forming a contact is formed higher than a gate electrode of a transistor. By planarizing the oxide layer, the height of the oxide layer in the transistor forming regions of salicide structure and non-salicide structure is identical.
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