| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem such that it is difficult to provide in a short process a low-resistance contact plug which is free from a diffusion layer leakage to a memory cell part of shallow junction, or a low-resistance contact plug to a peripheral circuit of comparatively deep junction other than a memory cell part in a multi-functional semiconductor device, which includes fine memory cells. SOLUTION: An interval between gate electrodes 181 in a memory cell part 180 and another interval between gate electrodes 182 in a peripheral circuit part 190 are set so as to have a certain relation with the width of the sidewall insulating films 183 and 184 of a gate electrode, and furthermore a contact 167 is selectively bored in a memory cell part 180 first taking advantage of a stopper film 185, the base of the contact 167 is filled with a silicon layer 170, by which an optimal electrode structure can be formed on an N-type diffusion layer 164 in the memory cell part 180 and an N-type diffusion layer 165 in the peripheral circuit part 190, respectively. |
