| 摘要 |
Disclosed is a method of fabricating a semiconductor device, including the steps of: forming an interconnection pattern on the surface of a semiconductor substrate by etching; treating the interconnection pattern and a portion, not covered with the interconnection pattern, of the substrate surface using an organic amine based resist releasing liquid containing at least a lower aminoalcohol, water, and an anti-corrosion agent; and forming a SiO2 film (for example, O3-TEOS-NSG film) on the interconnection pattern and the portion, not covered with the interconnection pattern, of the substrate surface, using ozone and an organic silicon source. This is effective to reduce the pattern dependence on the thickness in SiO2 film formed on the interconnection pattern.
|
