SOLID STATE IMAGE SENSOR AND METHOD OF FABRICATION THEREOF

摘要

PURPOSE: Provided are a solid state image sensor in which vertical charge transfer efficiency is prevented from deteriorating due to short channel effect, and a method for fabricating such a solid state image sensor. CONSTITUTION: A vertical charge transfer path(205) includes a part(region A) defined by an isolation region(202) on the opposite sides, and a part(region B) defined by the isolation region(202) only on one side. Impurity concentration of the isolation region(202a) defining the opposite sides is set lower than that of the isolation region(202b) defining one side by such a degree as short channel effect is reduced in the vertical charge transfer path(205) at the part defined by the isolation region(202) on the opposite sides.