| 摘要 |
PURPOSE: A flash memory device is provided which simultaneously performs cell data sensing and data buffer reading operations to improve random access time. CONSTITUTION: A flash memory device includes a data buffer configured of n latch blocks for reading cell data of a cell array constructed of word line*bit line(m*n), the first i-bit counter(61) for controlling switches of a multiplexer externally outputting the read data of the data buffer, and the second j-bit counter(63) for controlling switches of the data buffer. The flash memory device further has the first decoder/driver block(62) for NANDing a data bus read signal(DBRD) and the output signal of the first counter and inverting the NANDed signal to generate input/output signals(IO1,IO2,...,IOn), the second decoder/driver block(64) for NANDing the output signal of the second counter and a sense amplifier read signal(S/A RD) and inverting the NANDed signal to generate write enable signals(WE1',WE2'), and the third decoder/driver block(65) for operating the write enable signals and data bus read signal and inverting the result signal to generate read enable signals(RD1',RD2').
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