发明名称 PROTECTIVE FILM FORMING METHOD ON SEMICONDUCTOR DEVICE FORMING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To surely form a protective film over the entire surface of a substrate, related to a film-forming device comprising a substrate holder. SOLUTION: A protective film is formed twice with a film-forming apparatus 2. A wafer W taken out of a substrate holder, after a first film-formation is moved to a rotary device 4 and placed on a turntable 41 for rotation in a horizontal plane by 10 deg.. Then the wafer W is moved to the film-forming device 2, and attached to the substrate holder, while the substrate is retained in a state different from the first one. Under these conditions, a second formation of the protective film is executed.
申请公布号 JP2001102379(A) 申请公布日期 2001.04.13
申请号 JP19990274612 申请日期 1999.09.28
申请人 ASAHI KASEI MICROSYSTEMS KK 发明人 YAMADA TAKEHIRO
分类号 H01L21/31;H01L21/318;H01L21/86;H01L27/12;(IPC1-7):H01L21/318 主分类号 H01L21/31
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