| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of detecting crystal defects of a semiconductor and a method of observing crystal defects, whereby the defects can be evaluated conveniently under conditions of approximating actual defects. SOLUTION: After depositing a metal onto the surface of a semiconductor crystal which is to become come a sample, an electron beam is irradiated on the crystal surface to precipitate the metal on the crystal defect surface, thereby making it clear, and then the crystal defect is detected.</p> |
