| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve positional accuracy of pattern exposure by accurately detecting misregistration of a partial collective beam and correcting the misregistration. SOLUTION: In a mask pattern forming region 11a of a mask for projection exposure, a plurality of transparent hole patterns 12 are formed, and auxiliary aperture parts 14 are formed around the respective transparent hole patterns 12. Before electron beam exposure is conducted to material to be exposed, imaging positions in the image focal plane of the objective optical system of an electron beam, which is irradiated on the auxiliary aperture parts 14 arranged around the respective transparent hole patterns 12 and penetrates the parts 14, are obtained. On the basis of the imaging positions, misregistration of the electron beam penetrating the respective transparent hole patterns 12, i.e., a partial collective beam is obtained. The misregistration is corrected, and electron beam exposure is conducted on the material to be exposed.</p> |
