Cleaning liquid for semiconductor device manufacturing includes phosphoric acid or orthophosphoric acid which has preset hydrogen ion concentration for removing resist scum adhered to wiring layer

摘要

The resist scum (22a) adhering to wiring layer (20) exposed on silicon substrate (2), has ammonium phosphate as principal component. The resist scum is removed by using phosphoric acid or orthophosphoric acid which has hydrogen ion concentration of 10-4 mol/l or more. An Independent claim is also included for semiconductor device manufacture.