METHOD FOR FORMING POLYCIDE WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a polycide wiring of a semiconductor device is provided to improve device characteristic by removing fine oxides without an additional process. CONSTITUTION: A polysilicon layer(3) and a transition metal silicide layer(4) are stacked on a completed structure after finishing predetermined processes. A mask pattern is formed on the transition metal silicide layer(4). A fine oxide(6) generated a boundary portion between the transition metal silicide layer(4) and the polysilicon layer(3) is exposed by etching the exposed transition metal silicide layer(4). The fine oxide(6) is removed by using an in-situ plasma etching process with an etching selection ratio similar to the polysilicon layer(3). A wiring is formed by etching the exposed polysilicon layer(3).