| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an LDDFET good in performance which can avoid damage to a GaAs substrate, drop of the carrier concn. and deterioration of the light doped drain(LDD) FET characteristics. SOLUTION: The manufacturing method comprises the step of forming gate electrodes 3 on a substrate 1, the step of forming a low-concn. diffused layer 4 on the substrate 1 top at lower side faces of the gate electrodes 3, the step of forming an org. film on the gate electrodes 3 and the substrate 1 to form side walls on the gate electrodes 3 side faces by RIE using oxygen ions, and the step of forming a high-concn. diffused layer 6 on the low-concn. diffused layer 4 self-alignedly with the side walls.
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