| 摘要 |
<p>PROBLEM TO BE SOLVED: To remove a contaminant in a semiconductor without increasing production cost by heating both a first thin-film layer undoped with an amorphous semiconductor on one main surface of a semiconductor substrate and a one conductive type second thin-film layer made of amorphous semiconductor formed thereon. SOLUTION: A first thin-film layer 2, made of undoped amorphous silicon undoped, is formed by a plasma CVD method on the main surface of a semiconductor substrate 1 made of n-type single-crystal silicon. Then, a second thin-film layer 3 made of p-type amorphous silicon is formed on the first thin-film layer 2 by the plasma CVD method. The semiconductor substrate 1, on which the first and second thin-film layers 2 and 3 are formed, is heated to crystalize a laminate of the layers 2 and 3 and form a crystalized film 4. In this case, contaminants in the semiconductor substrate 1 are included in the crystalized film 4, and heat diffusion of a p-type impurity contained in the second thin-film layer 3 is suppressed by the first thin-film layer 2, thus preventing the p-type impurity from entering the semiconductor substrate 1.</p> |
