发明名称 Process for producing a semiconductor thin film with a bonding and separating steps, solar cell fabrication and anodizing apparatus
摘要 <p>In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process comprises the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5). This process enables separation of the thin-film semiconductor layer at a small force while causing less cracks, breaks or defects to be brought into it and can manufacture high-performance semiconductor members and solar cells in a good efficiency. &lt;IMAGE&gt;</p>
申请公布号 EP1059663(A2) 申请公布日期 2000.12.13
申请号 EP20000112239 申请日期 2000.06.07
申请人 CANON KABUSHIKI KAISHA 发明人 IWASAKI, YUKIKO;NISHIDA, SHOJI;SAKAGUCHI, KIYOFUMI;UKIYO, NORITAKA
分类号 C25D11/32;C25D17/10;H01L21/3063;H01L21/762;H01L29/06;(IPC1-7):H01L21/20;H01L31/18;H01L21/304;H01L21/306 主分类号 C25D11/32
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