| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a laser beam annealing device and an other laser working device capable of surely preventing a return beam from a mask. SOLUTION: A laser beam AL from a laser beam source is made incident into a prescribed region on a work as a reduced rectangular beam. A thin film of an amorphous semiconductor of amorphous Si, etc., is formed on the work. A prescribed region of the semiconductor is annealed and crystallized by irradiating and scanning the rectangular beam, a semiconductor film excellent in electrical characteristics is provided. At this time, because a mask assembly 22 is integrated with a mask 22a formed with a slit and a reflection member 22b inclined at a prescribed angle against the mask 22a toward the incident face side of the mask 22a, the laser beam is prevented from reverse-advancing from the mask 22a by the reflection pattern of the reflection face formed to the reflection member 22b, it prevents that an unintended reflection beam from the mask 22a gives damage to a homogenizer 21 of a beam source side, etc.</p> |
