| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light emitting element for preventing a transparent electrode from being contaminated due to a resist film at formation of a p-side pad electrode, and for forming the pad electrode thick by a simple method, and for improving the reliability of wire bonding or the like. SOLUTION: A semiconductor layer forming a light emitting layer by including an n-type layer 3 and a p-type layer 5 is laminated on a wafer-shaped substrate (a), and a transparent electrode 6 is formed on a p-type layer 5 at the surface side of the laminated semiconductor layer, and a metallic film 9a for an n side electrode is formed on the n-type layer 3 exposed by removing one part of the laminated semiconductor layer (b), and a passivation film 7 is formed on the surface of a wafer on which the transparent electrode 6 and the metallic film 9a for the n-side electrode are formed (c), and the formation places of pad electrodes on the part of the metallic film for the n-side electrode and the transparent electrode 6 of the passivation film 7 are opened (d), and respective pad electrodes 8 and 9 are formed on the opened and exposed part of the metallic film 9a for the n-side electrode and transparent electrode 6. |
