| 摘要 |
PROBLEM TO BE SOLVED: To control the composition and structure of an oxide film on the surface of a semiconductor base material while a process temperature is lowered for reduced contact resistance, by allowing a first layer from a base material side to comprise a group VB element, over which a second and succeeding layers are sequentially laminated. SOLUTION: A base material 1 of a p-type InP compound semiconductor crystal is provided, on which an ohmic electrode 2 is provided. The electrode comprises a first layer 21 of group VB metal, a second 1ayer 22 of Zn, a third layer 23 of high melting-point metal Nb, and a fourth layer 24 of Au (a). The group VB element comprises at least one kind of element selected among, especially, Sb, Bi, and As, with the thickness of the first layer being 2-10 nm. The second layer comprises Zn, as well as a transition metal in addition to Zn. Here, the film thickness of the third and fourth layers are 20-200 nm and 100-500 nm, respectively. |
