SPIN INTERFERENCE TYPE THREE-TERMINAL ELEMENT

摘要

PROBLEM TO BE SOLVED: To control conductance by controlling the spin-orbit interaction of a semiconductor channel with a gate voltage, so that the phases of electron spin wave functions are controlled. SOLUTION: An element of hetero structure is formed into a ring shape by using a narrow-gap semiconductor with large spin-orbit interaction, and a signal is inputted from a point on the circumference of the element to divide into two both semicircular parts, then the signals that have passed through both semi-circles are combined and extracted from a facing point on the circumference. A gate electrode 6 is provided on the entire surface or a part of a ring-shaped structure to control the spin-orbit interaction, or a control wire is provided near the ring-shaped structure to make the current flow and generate a magnetic field, so that the conductance of the element is controlled.